国内首条28/22nm ReRAM 12寸芯片生产线来了 地址在……

存储芯片中除了NAND闪存及DRAM内存之外，还有多种技术选择，ReRAM(非易失性阻变式存储器)就是其中一种，其写入寿命可达100万次，此前主要是生产难度大，现在杭州昕原半导体主导建设了国内首条28/22nm ReRAM 12寸中试生产线。

据杭州日报消息，昕原半导体主导建设的国内首条28/22nm ReRAM(阻变存储器)12寸中试生产线顺利完成了自主研发设备的装机验收工作，实现了中试线工艺流程的通线，并成功流片(试生产)。

传统CMOS代工厂或因囿于资源所限，迭代速度较慢，从而影响工艺开发进度，而国内各大科研院所虽可在实验室阶段加快迭代速度，但没有标准的12寸量产产线，实验成果往往很难走向量产。

昕原自行搭建的28/22nm ReRAM(阻变存储器)12寸中试生产线就解决了上述问题。汲取了代工厂和实验室的长处，迭代速度快， 产线灵活，拥有自主可控的知识产权，使得ReRAM相关产品的快速实现变成了可能。

“作为大陆首条28/22nm ReRAM12寸中试生产线，我们产线的顺利导通并完成产品的验证和实现量产，将极大带动我国新型存储行业发展。”

昕原半导体相关负责人表示，“而在这一领域，目前国内外差距较小，壁垒尚未形成，为我国存储器产业实现‘弯道超车’提供了可能。”

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